Hari Nair

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physics.app-ph2026

Sub-Micron Gate $β - G a_{2} O_{3}$ FinFETs with Current Density $>$ 750 mA/mm and Ion/Ioff Ratio $>$ $1 0^{9}$

Nabasindhu Das, Cameron Gorsak, Pushpanshu Tripathi +7

In this work, we demonstrate submicron-gate $β - G a_{2} O_{3}$ FinFETs that integrate Si delta-doped channels with selectively regrown n++ source/drain contacts. The devices employ 10…

physics.app-ph2025

Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2

Nabasindhu Das, Cameron Gorsak, Ankita Kashyap +6

This letter reports on the design and demonstration of high-performance Beta-Ga2O3 FinFETs utilizing MOCVD-grown Si delta-doped channels to achieve enhanced carrier transport and e…

Sub-Micron Gate β−Ga2​O3​ FinFETs with Current Density > 750 mA/mm and Ion/Ioff Ratio > 109

Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2

Sub-Micron Gate $β - G a_{2} O_{3}$ FinFETs with Current Density $>$ 750 mA/mm and Ion/Ioff Ratio $>$ $1 0^{9}$