$\beta -(A{l}_{0.19}G{a}_{0.81}{)}_2{O}_3/G{a}_2{O}_3$ Modulation-Doped Field-Effect Transistors with $>$ 6 kV Breakdown

Julian Gervassi Saga, Joshua T Buontempo, Nabasindhu Das +3

$\beta -(A{l}_{0.19}G{a}_{0.81}{)}_2{O}_3/G{a}_2{O}_3$ modulation-doped field-effect transistors (MODFETs) incorporating a high-quality Al2O3 gate dielectric and SiNx passivation are demonstrate…