Hari Nair

collaborators

2 papers

cond-mat.mtrl-sci2026

$β - (A l_{0.19} G a_{0.81})_{2} O_{3} / G a_{2} O_{3}$ Modulation-Doped Field-Effect Transistors with $>$ 6 kV Breakdown

Julian Gervassi Saga, Joshua T Buontempo, Nabasindhu Das +3

$β - (A l_{0.19} G a_{0.81})_{2} O_{3} / G a_{2} O_{3}$ modulation-doped field-effect transistors (MODFETs) incorporating a high-quality Al2O3 gate dielectric and SiNx passivation are demonstrate…

physics.app-ph2025

Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2

Nabasindhu Das, Cameron Gorsak, Ankita Kashyap +6

This letter reports on the design and demonstration of high-performance Beta-Ga2O3 FinFETs utilizing MOCVD-grown Si delta-doped channels to achieve enhanced carrier transport and e…

β−(Al0.19​Ga0.81​)2​O3​/Ga2​O3​ Modulation-Doped Field-Effect Transistors with > 6 kV Breakdown

Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2

$β - (A l_{0.19} G a_{0.81})_{2} O_{3} / G a_{2} O_{3}$ Modulation-Doped Field-Effect Transistors with $>$ 6 kV Breakdown