Hari Nair

collaborators

3 papers

physics.app-ph2026

Sub-Micron Gate $β - G a_{2} O_{3}$ FinFETs with Current Density $>$ 750 mA/mm and Ion/Ioff Ratio $>$ $1 0^{9}$

Nabasindhu Das, Cameron Gorsak, Pushpanshu Tripathi +7

In this work, we demonstrate submicron-gate $β - G a_{2} O_{3}$ FinFETs that integrate Si delta-doped channels with selectively regrown n++ source/drain contacts. The devices employ 10…

cond-mat.mtrl-sci2026

$β - (A l_{0.19} G a_{0.81})_{2} O_{3} / G a_{2} O_{3}$ Modulation-Doped Field-Effect Transistors with $>$ 6 kV Breakdown

Julian Gervassi Saga, Joshua T Buontempo, Nabasindhu Das +3

$β - (A l_{0.19} G a_{0.81})_{2} O_{3} / G a_{2} O_{3}$ modulation-doped field-effect transistors (MODFETs) incorporating a high-quality Al2O3 gate dielectric and SiNx passivation are demonstrate…

physics.app-ph2025

Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2

Nabasindhu Das, Cameron Gorsak, Ankita Kashyap +6

This letter reports on the design and demonstration of high-performance Beta-Ga2O3 FinFETs utilizing MOCVD-grown Si delta-doped channels to achieve enhanced carrier transport and e…

Sub-Micron Gate β−Ga2​O3​ FinFETs with Current Density > 750 mA/mm and Ion/Ioff Ratio > 109

β−(Al0.19​Ga0.81​)2​O3​/Ga2​O3​ Modulation-Doped Field-Effect Transistors with > 6 kV Breakdown

Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2

Sub-Micron Gate $β - G a_{2} O_{3}$ FinFETs with Current Density $>$ 750 mA/mm and Ion/Ioff Ratio $>$ $1 0^{9}$

$β - (A l_{0.19} G a_{0.81})_{2} O_{3} / G a_{2} O_{3}$ Modulation-Doped Field-Effect Transistors with $>$ 6 kV Breakdown