36 citations · 48 across the 10 of their papers we have counts for
10 papers
Efficient Quantum-Mechanical Modeling of Nonradiative Charge Transfer Processes
Alexander Karl, Dominic Waldhoer, Theresia Knobloch +2
Nonradiative charge transfer processes play a central role in a wide range of physical phenomena, including reliability phenomena in semiconductor devices such as bias temperature…
Towards ultra-scaled nanoelectronics using the zipper material system
Mohammad Rasool Davoudi, Mina Bahrami, Axel Verdianu +20
Two-dimensional (2D) materials could overcome the scaling bottleneck of nanoelectronics by enabling atomically thin channels, superior electrostatic control, and reduced short-chan…
Valley Splittings in Si/SiGe Heterostructures from First Principles
Lukas Cvitkovich, Tancredi Salamone, Christoph Wilhelmer +3
We compute valley splittings in Si/SiGe superlattices using ab initio density functional theory (DFT). This first-principle approach is expected to provide an excellent description…
Hysteresis Measurements as a Diagnostic Tool: A Systematic Approach for Stability Benchmarking and Performance Projection of 2D-Materials-Based MOSFETs
Alexander Karl, Dominic Waldhoer, Theresia Knobloch +19
Judging by its omnipresence in the literature, the hysteresis observed in the transfer characteristics of emerging transistors based on 2D-materials is widely accepted as an import…
How to Identify Suitable Gate Dielectrics for Transistors based on Two-Dimensional Semiconductors
Theresia Knobloch, Quentin Smets, Anton E. O. Persson +23
The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing c…
Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials
Mahdi Pourfath, Tibor Grasser
Transistor miniaturization requires controlling gate leakage through ultrathin dielectrics and minimizing source/drain contact resistance. Although two-dimensional (2D) semiconduct…
Machine Learning Force Field for Thermal Oxidation of Silicon
Lukas Cvitkovich, Franz Fehringer, Christoph Wilhelmer +3
Looking back at seven decades of highly extensive application in the semiconductor industry, silicon and its native oxide SiO are still at the heart of several technological de…
Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits
Lukas Cvitkovich, Peter Stano, Christoph Wilhelmer +4
On the quest to understand and reduce environmental noise in Si spin qubits, hyperfine interactions between electron and nuclear spins impose a major challenge. Silicon is a promis…
Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs
Maximilian W. Feil, Magdalena Weger, Hans Reisinger +10
Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are g…
Comphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices
Dominic Waldhoer, Christian Schleich, Jakob Michl +9
Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegrap…