36 citations · 48 across the 10 of their papers we have counts for
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Towards ultra-scaled nanoelectronics using the zipper material system
Mohammad Rasool Davoudi, Mina Bahrami, Axel Verdianu +20
Two-dimensional (2D) materials could overcome the scaling bottleneck of nanoelectronics by enabling atomically thin channels, superior electrostatic control, and reduced short-chan…
Valley Splittings in Si/SiGe Heterostructures from First Principles
Lukas Cvitkovich, Tancredi Salamone, Christoph Wilhelmer +3
We compute valley splittings in Si/SiGe superlattices using ab initio density functional theory (DFT). This first-principle approach is expected to provide an excellent description…
Hysteresis Measurements as a Diagnostic Tool: A Systematic Approach for Stability Benchmarking and Performance Projection of 2D-Materials-Based MOSFETs
Alexander Karl, Dominic Waldhoer, Theresia Knobloch +19
Judging by its omnipresence in the literature, the hysteresis observed in the transfer characteristics of emerging transistors based on 2D-materials is widely accepted as an import…
How to Identify Suitable Gate Dielectrics for Transistors based on Two-Dimensional Semiconductors
Theresia Knobloch, Quentin Smets, Anton E. O. Persson +23
The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing c…
Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials
Mahdi Pourfath, Tibor Grasser
Transistor miniaturization requires controlling gate leakage through ultrathin dielectrics and minimizing source/drain contact resistance. Although two-dimensional (2D) semiconduct…