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cond-mat.mes-hall2025★ 1 cited
Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials
Mahdi Pourfath, Tibor Grasser
Transistor miniaturization requires controlling gate leakage through ultrathin dielectrics and minimizing source/drain contact resistance. Although two-dimensional (2D) semiconduct…
cond-mat.mes-hall2024★ 1 cited
Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits
Lukas Cvitkovich, Peter Stano, Christoph Wilhelmer +4
On the quest to understand and reduce environmental noise in Si spin qubits, hyperfine interactions between electron and nuclear spins impose a major challenge. Silicon is a promis…