46 citations · 48 across the 9 of their papers we have counts for
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cond-mat.mes-hall2024
Statistical Analysis of Spurious Dot Formation in SiMOS Single Electron Transistors
Kuan-Chu Chen, Clement Godfrin, George Simion +8
The spatial distribution of spurious dots in SiMOS single-electron transistors (SETs), fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a d…
cond-mat.mes-hall2024★ 46 cited
A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
Paul Steinacker, Nard Dumoulin Stuyck, Wee Han Lim +24
Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially via…