46 citations · 48 across the 9 of their papers we have counts for
12 papers
SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography
Thomas Van Caekenberghe, Paul Steinacker, Bart Raes +31
The realization of large-scale silicon quantum processors requires spin qubits compatible with advanced semiconductor manufacturing technologies, demanding lithographic processes t…
Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays
Arne Loenders, Jacques Van Damme, Clement Godfrin +19
Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness…
Valley enhanced Rabi frequency in n-type planar Silicon-MOS quantum dot
Xunyao Luo, Xander Peetroons, Tsung-Yeh Yang +27
Electron spin resonance spectroscopy (ESR) of a single electron in planar Si-MOS quantum dot is reported in the vicinity of a valley level anti-crossing. A number of one and two-ph…
Concatenated continuous driving of silicon qubit by amplitude and phase modulation
Takuma Kuno, Takeru Utsugi, Andrew J. Ramsay +22
The rate of coherence loss is lower for a qubit under the Rabi drive than a freely evolving qubit . Building on this principle, concatenated continuous d…
Long coherence silicon spin qubit fabricated in a 300 mm industrial foundry
Petar Tomić, Patrick Bütler, Yuze Wu +17
Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fa…
High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer
Xander Peetroons, Xunyao Luo, Tsung-Yeh Yang +26
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using elect…
Eight-Qubit Operation of a 300 mm SiMOS Foundry-Fabricated Device
Andreas Nickl, Nard Dumoulin Stuyck, Paul Steinacker +24
Silicon spin qubits are a promising platform for quantum computing due to their high coherence, controllability, and CMOS manufacturability, yet scalable implementations have so fa…
Precision high-speed quantum logic with holes on a natural silicon foundry platform
Isaac Vorreiter, Jonathan Y. Huang, Scott D. Liles +15
Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins…
Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs
J. P. Wendoloski, J. Hillier, S. D. Liles +17
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobili…
A trilinear quantum dot architecture for semiconductor spin qubits
R. Li, V. Levajac, C. Godfrin +10
Semiconductor quantum dot spin qubits hold significant potential for scaling to millions of qubits for practical quantum computing applications, as their structure highly resembles…
Statistical Analysis of Spurious Dot Formation in SiMOS Single Electron Transistors
Kuan-Chu Chen, Clement Godfrin, George Simion +8
The spatial distribution of spurious dots in SiMOS single-electron transistors (SETs), fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a d…
A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
Paul Steinacker, Nard Dumoulin Stuyck, Wee Han Lim +24
Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially via…