49 citations · 51 across the 7 of their papers we have counts for
3 papers · 1 filter
Sub-Thermionic Switching in a Negative-Capacitance Bandgap-Change Field-Effect Transistor
Rahul B Awale, Mike Klymenko, Yuefeng Yin +3
Overcoming the approximately 60~mV/dec Boltzmann limit of the subthreshold swing remains a central challenge for low-power nanoelectronics. Negative-capacitance field-effect transi…
Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor
Kaijian Xing, Zherui Yang, Weiyao Zhao +17
The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communica…
Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices
Xiongfang Liu, Kaijian Xing, Chi Sin Tang +7
The development of advanced electronic devices is contingent upon sustainable material development and pioneering research breakthroughs. Traditional semiconductor-based electronic…