most citedIntrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2

3.2k citations · 4.2k across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2008297 cited

Printed Graphene Circuits

Jian-Hao Chen, Masa Ishigami, Chaun Jang +3

we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed…

cond-mat.mtrl-sci2008360 cited

Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering

C. Jang, S. Adam, J. -H. Chen +3

We reduce the dimensionless interaction strength in graphene by adding a water overlayer in ultra-high vacuum, thereby increasing dielectric screening. The mobility limited by long…

cond-mat.mes-hall2008107 cited

Density inhomogeneity driven percolation metal-insulator transition and dimensional crossover in graphene nanoribbons

S. Adam, S. Cho, M. S. Fuhrer +1

Transport in graphene nanoribbons with an energy gap in the spectrum is considered in the presence of random charged impurity centers. At low carrier density, we predict and establ…

cond-mat.mtrl-sci20073.2k cited

Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2

J. H. Chen, C. Jang, S. Xiao +2

The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is…

cond-mat.mes-hall2007277 cited

Graphene Spin Transistor

Sungjae Cho, Yung-Fu Chen, Michael S. Fuhrer

Graphitic nanostructures, e.g. carbon nanotubes (CNT) and graphene, have been proposed as ideal materials for spin conduction[1-7]; they have long electronic mean free paths[8] and…