49 citations · 51 across the 7 of their papers we have counts for
8 papers
Sub-Thermionic Switching in a Negative-Capacitance Bandgap-Change Field-Effect Transistor
Rahul B Awale, Mike Klymenko, Yuefeng Yin +3
Overcoming the approximately 60~mV/dec Boltzmann limit of the subthreshold swing remains a central challenge for low-power nanoelectronics. Negative-capacitance field-effect transi…
Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor
Kaijian Xing, Zherui Yang, Weiyao Zhao +17
The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communica…
Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices
Xiongfang Liu, Kaijian Xing, Chi Sin Tang +7
The development of advanced electronic devices is contingent upon sustainable material development and pioneering research breakthroughs. Traditional semiconductor-based electronic…
Valley optoelectronics based on meta-waveguide photodetectors
Chi Li, Kaijian Xing, Wenhao Zhai +10
In transition metal dichalcogenides, the valley degree of freedom directly couples valley-polarised excitons - excited by circularly polarised light - to valley-dependent chiral ph…
Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides
Yi-Hsun Chen, Ping-Yuan Lo, Kyle W. Boschen +15
In this work, we report a pronounced light upconversion in few-layer transition metal dichalcogenides. Our joint theory-experiment study attributes the upconversion photoluminescen…
Pick-and-place transfer of arbitrary-metal electrodes for van der Waals device fabrication
Kaijian Xing, Daniel McEwen, Weiyao Zhao +12
Van der Waals electrode integration is a promising strategy to create near-perfect interfaces between metals and two-dimensional materials, with advantages such as eliminating Ferm…
Imaging topological polar structures in marginally twisted 2D semiconductors
Thi-Hai-Yen Vu, Daniel Bennett, Gayani Nadeera Pallewella +16
Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique proper…
Non-Drude THz conductivity of graphene due to structural distortions
Tan-Phat Nguyen, Mykhailo Klymenko, Gary Beane +7
The remarkable electrical, optical and mechanical properties of graphene make it a desirable material for electronics, optoelectronics and quantum applications. A fundamental under…