69 citations · 122 across the 4 of their papers we have counts for
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cond-mat.mes-hall2026
Enhanced intrinsic spin-orbit driving of a Loss-DiVincenzo qubit near the spin-valley hotspot in Si/SiGe
Alexander Willmes, Max Oberländer, Max Beer +7
In most Si/SiGe-based spin qubit implementations, high-fidelity single-qubit gates are achieved using micromagnets, which enable the use of electric spin dipole resonance via synth…
cond-mat.mes-hall2026
Conveyor-mode electron shuttling through a T-junction in Si/SiGe
Max Beer, Ran Xue, Lennart Deda +6
Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns w…
cond-mat.mes-hall2023★ 53 cited
Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function
Ran Xue, Max Beer, Inga Seidler +6
The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quan…