39 citations · 64 across the 8 of their papers we have counts for
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Unprecedented Enhancement of Piezoelectricity in Wurtzite Nitride Semiconductors via Thermal Annealing
Shubham Mondal, Md Mehedi Hasan Tanim, Garrett Baucom +9
The incorporation of rare-earth elements in wurtzite nitride semiconductors, e.g., scandium alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses…
Nanoscale Engineering of Wurtzite Ferroelectrics: Unveiling Phase Transition and Ferroelectric Switching in ScAlN Nanowires
Ding Wang, Ping Wang, Shubham Mondal +5
The pursuit of extreme device miniaturization and the exploration of novel physical phenomena have spurred significant interest in crystallographic phase control and ferroelectric…
Si/AlN p-n heterojunction interfaced with ultrathin SiO2
Haris Naeem Abbasi, Jie Zhou, Ding Wang +9
Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offeri…
Selective incorporation of antimony into gallium nitride
Yujie Liu, Ishtiaque Ahmed Navid, Zetian Mi +1
Dilute concentrations of antimony (Sb) incorporation into GaN induce strong band-gap bowing and tunable room-temperature photoluminescence from the UV to the green spectral regions…
Rethinking Polarization in Wurtzite Semiconductors
Ding Wang, Danhao Wang, Samuel Yang +1
Polarization arising from non-centrosymmetric wurtzite lattice underpins the physics and functionality of gallium nitride (GaN)-the most produced semiconductor materials second onl…