73 citations · 110 across the 7 of their papers we have counts for
7 papers
Domain control and periodic poling of epitaxial ScAlN
Fengyan Yang, Ding Wang, Ping Wang +3
ScAlN is an emerging ferroelectric material that possesses large band gap, strong piezoelectricity, and holds great promises for enhanced χ^{(2)} nonliearity. In this study, we dem…
Perspective: Towards the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: the case of rutile GeO
S. Chae, K. A. Mengle, K. Bushick +8
Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric…
Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells
Ross Cheriton, Sharif M. Sadaf, Luc Robichaud +3
Intermediate band solar cells hold the promise of ultrahigh power conversion efficiencies using a single semiconductor junction. Many current implementations use materials with ban…
Removing Stripes, Scratches, and Curtaining with Non-Recoverable Compressed Sensing
Jonathan Schwartz, Yi Jiang, Yongjie Wang +6
Highly-directional image artifacts such as ion mill curtaining, mechanical scratches, or image striping from beam instability degrade the interpretability of micrographs. These unw…
Observation of Disorder State Coupling to Excitons in InGaN Disks in GaN Nanowires
Cameron Nelson, Yong-Ho Ra, Zetian Mi +1
InxGa1-xN disks in GaN nanowires (DINWs) have emerged as a viable technology for on-chip tunable visible spectrum emission without the use of a phosphor. Here we present a study of…
Sub-eV Decoherence-Induced Population Pulsation Resonances in an InGaN system
Cameron Nelson, Yong-Ho Ra, Zetian Mi +2
We report on high frequency resolution coherent nonlinear optical spectroscopy on an ensemble of InGaN disks in GaN nanowires at 300 K. Sub-eV resonances in the inhomogeneously…
McMillan-Rowell Oscillations in a Low Spin-Orbit SNS Semiconducting Junction
Binxin Wu, Chenxu Shao, Sherry Chu +6
The electronic transport properties of an SNS junction formed by an InN nanowire (N) and Al contacts (S) with a superconducting transition temperature T_c ~ 0.92 K were investigate…