activity
20142024
most citedInterlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction

340 citations · 863 across the 7 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2017340 cited

Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction

Jason S. Ross, Pasqual Rivera, John Schaibley +9

Semiconductor heterostructures are backbones for solid state based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures has enabled the…

cond-mat.mes-hall2016133 cited

Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures

John R. Schaibley, Pasqual Rivera, Hongyi Yu +7

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In a…

cond-mat.mes-hall201648 cited

Many-body effects in nonlinear optical responses of 2D layered semiconductors

Grant Aivazian, Hongyi Yu, Sanfeng Wu +5

We performed ultrafast degenerate pump-probe spectroscopy on monolayer WSe2 near its exciton resonance. The observed differential reflectance signals exhibit signatures of strong m…

cond-mat.mes-hall2016196 cited

Interlayer coupling in commensurate and incommensurate bilayer structures of transition metal dichalcogenides

Yong Wang, Zhan Wang, Wang Yao +2

The interlayer couplings in commensurate and incommensurate bilayer structures of transition metal dichalcogenides are investigated with perturbative treatment. The interlayer coup…

cond-mat.mes-hall201428 cited

Magnetisms in -type monolayer gallium chalcogenides (GaSe, GaS)

Sianxin Wu, Xia Dai, Hongyi Yu +3

Magnetisms in -type monolayer GaX (X=S,Se) is investigated by performing density-functional calculations. Due to the large density of states near the valence band edge, these mo…

cond-mat.mes-hall2014112 cited

Nonlinear valley and spin currents from Fermi pocket anisotropy in 2D crystals

Hongyi Yu, Yue Wu, Gui-Bin Liu +2

Controlled flow of spin and valley pseudospin is key to future electronics exploiting these internal degrees of freedom of carriers. Here we discover a universal possibility for ge…