Magnetisms in $p$-type monolayer gallium chalcogenides (GaSe, GaS)

Abstract

Magnetisms in $p$-type monolayer GaX (X=S,Se) is investigated by performing density-functional calculations. Due to the large density of states near the valence band edge, these monolayer semiconductors are ferromagnetic within a small range of hole doping. The intrinsic Ga vacancies can promote local magnetic moment while Se vacancies cannot. Magnetic coupling between vacancy-induced local moments is ferromagnetic and surprisingly long-range. The results indicate that magnetization can be induced by hole doping and can be tuned by controlled defect generation.

arXiv comment5 pages

Cited by in corpus (9)

• 2D materials and van der Waals heterostructures
• Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials
• Tunable Quasiparticle Band Gap in Few Layer GaSe/graphene Van der Waals Heterostructures
• Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES
• Symmetry, distorted bandstructure, and spin-orbit coupling of (group-III) metal-monochalcogenide monolayers
• Hole-doping induced ferromagnetism in 2D materials
• Thickness-Dependent and Magnetic-Field-Driven Suppression of Antiferromagnetic Order in Thin V${}_5$S${}_8$ Single Crystals
• Charge density wave and superconducting phase in monolayer InSe
• Tunable Electronic, Optical and Transport Properties of Two Dimensional GaS Doped with Group II and Group IVa Elements