56 citations · 261 across the 16 of their papers we have counts for
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cond-mat.mtrl-sci2016★ 12 cited
Defect-induced magnetism in SiC probed by nuclear magnetic resonance
Z. T. Zhang, D. Dmytriieva, S. Molatta +5
We give evidence for intrinsic, defect-induced bulk paramagnetism in SiC by means of C and Si nuclear magnetic resonance (NMR) spectroscopy. The temperature dependenc…
cond-mat.mtrl-sci2016★ 19 cited
Suppressing the cellular breakdown in silicon supersaturated with titanium
Fang Liu, S Prucnal, R Hübner +4
Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted S…
cond-mat.mtrl-sci2016★ 25 cited
Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism
Shengqiang Zhou, Lin Li, Ye Yuan +11
For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resi…