activity
20052023
most citedCarrier dynamics in epitaxial graphene close to the Dirac point

313 citations · 3.6k across the 92 of their papers we have counts for

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Showing 2019 · cond-mat.mtrl-sciShow all

5 papers · 2 filters

cond-mat.mtrl-sci2019★ 4 cited

p-type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties

Chi Xu, Chenhui Zhang, Mao Wang +7

In the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases,…

cond-mat.mtrl-sci2019★ 1 cited

Hole compensation effect in III-Mn-V dilute ferromagnetic semiconductors

Chi Xu, Mao Wang, Ye Yuan +3

A systematic study of hole compensation effect on magnetic properties, which is controlled by defect compensation through ion irradiation, in (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P is p…

cond-mat.mtrl-sci2019★ 23 cited

Superconductivity in single-crystalline, aluminum- and gallium-hyperdoped germanium

Slawomir Prucnal, Viton Heera, René Hübner +11

Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, super…

cond-mat.mtrl-sci2019★ 28 cited

Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain

Changan Wang, Hongbin Zhang, Kumar Deepak +12

Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transit…

cond-mat.mtrl-sci2019★ 23 cited

Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping

Slawomir Prucnal, Yonder Berencén, Mao Wang +19

Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate…