5 citations · 13 across the 15 of their papers we have counts for
15 papers
Design and simulation of a 4H-SiC low gain avalanche diode with trench-isolation
Sebastian Onder, Philipp Gaggl, Jürgen Burin +6
We present the design and simulation of a 30 thick 4H-SiC Low Gain Avalanche Diode (LGAD) optimized for high-voltage operation. A 2.4 thick epitaxially…
In-situ Radiation Damage Study of Silicon Carbide Detectors Subjected to Clinical Proton Beams
Daniel Radmanovac, Andreas Gsponer, Simon Waid +5
Silicon carbide (SiC) planar PiN diodes from two different manufacturers were irradiated with 252.7 MeV protons from a medical synchrotron. Over the course of two 8h irradiation sh…
Extraction of Electron and Hole Drift Velocities in thin 4H-SiC PIN Detectors using High-Frequency Readout Electronics
Andreas Gsponer, Sebastian Onder, Stefan Gundacker +5
Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and…
Characterizing the Delivered Spill Structure of Medical Proton and Carbon-Ion Beams at MedAustron using a High Frequency Silicon Carbide Readout
Matthias Knopf, Andreas Gsponer, Matthias Kausel +7
Medical synchrotrons are often used for testing instrumentation in high-energy physics or non-clinical research in medical physics. In many applications of medical synchrotrons, su…
From Single Particles to Clinical Beam Rates: A Wide Dynamic Range Beam Monitor
Simon Waid, Philipp Gaggl, Andreas Gsponer +4
Access to high-energy particle beams is key for testing high-energy physics (HEP) instruments. Accelerators for cancer treatment can serve as such a testing ground. However, HEP in…
A double multi-turn injection scheme for generating mixed helium and carbon ion beams at medical synchrotron facilities
Matthias Kausel, Claus Schmitzer, Andreas Gsponer +7
The low relative charge-to-mass ratio offset of 0.065% between fully ionized helium-4 and carbon-12 ions enables simultaneous acceleration in hadron therapy synchrotrons. At the sa…
Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements
Andreas Gsponer, Philipp Gaggl, Jürgen Burin +2
Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community…
TCAD Parameters for 4H-SiC: A Review
Jürgen Burin, Philipp Gaggl, Simon Waid +2
In this literature review we investigate the permittivity, density-of-state mass, band gap, impact ionization, charge carrier recombination, incomplete ionization and mobility in 4…
TCAD Simulations of Radiation Damage in 4H-SiC
Jürgen Burin, Christopher Hahn, Philipp Gaggl +3
To increase the scientific output of particle physics experiments, upgrades are underway at all major accelerator facilities to significantly improve the luminosity. Consequently,…
The ECFA Early-Career Researchers Panel: Report for the year 2023
Julia Allen, Bruno Alves, Jan-Hendrik Arling +67
The European Committee for Future Accelerators (ECFA) Early-Career Researcher (ECR) panel, which represents the interests of the ECR community to ECFA, presents in this document it…
TCAD modeling of radiation-induced defects in 4H-SiC diodes
Philipp Gaggl, Jürgen Burin, Andreas Gsponer +3
Silicon Carbide (SiC) has several advantageous properties compared to Silicon (Si) that make it an appealing detector material, such as a larger charge carrier saturation velocity,…
Pulsed RF Knock-Out Extraction: A Potential Enabler for FLASH Hadrontherapy in the Bragg Peak
Simon Waid, Andreas Gsponer, Elisabeth Renner +7
One challenge on the path to delivering FLASH-compatible beams with a synchrotron is facilitating an accurate dose-control for the required ultra-high dose rates. We propose the us…
Measurement of the electron-hole pair creation energy in a 4H-SiC p-n diode
Andreas Gsponer, Matthias Knopf, Philipp Gaggl +3
For 4H silicon carbide (4H-SiC), the values for the electron-hole pair creation energy published in the literature vary significantly. This work presents an experime…
Neutron Radiation induced Effects in 4H-SiC PiN Diodes
Andreas Gsponer, Philipp Gaggl, Jürgen Maier +3
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders…
SiC Based Beam Monitoring System for Particle Rates from kHz to GHz
Simon Waid, Andreas Gsponer, Jürgen Maier +3
The extremely low dark current of silicon carbide (SiC) detectors, even after high-fluence irradiation, was utilized to develop a beam monitoring system for a wide range of particl…