5 citations · 13 across the 15 of their papers we have counts for
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Design and simulation of a 4H-SiC low gain avalanche diode with trench-isolation
Sebastian Onder, Philipp Gaggl, Jürgen Burin +6
We present the design and simulation of a 30 thick 4H-SiC Low Gain Avalanche Diode (LGAD) optimized for high-voltage operation. A 2.4 thick epitaxially…
In-situ Radiation Damage Study of Silicon Carbide Detectors Subjected to Clinical Proton Beams
Daniel Radmanovac, Andreas Gsponer, Simon Waid +5
Silicon carbide (SiC) planar PiN diodes from two different manufacturers were irradiated with 252.7 MeV protons from a medical synchrotron. Over the course of two 8h irradiation sh…
Extraction of Electron and Hole Drift Velocities in thin 4H-SiC PIN Detectors using High-Frequency Readout Electronics
Andreas Gsponer, Sebastian Onder, Stefan Gundacker +5
Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and…
Characterizing the Delivered Spill Structure of Medical Proton and Carbon-Ion Beams at MedAustron using a High Frequency Silicon Carbide Readout
Matthias Knopf, Andreas Gsponer, Matthias Kausel +7
Medical synchrotrons are often used for testing instrumentation in high-energy physics or non-clinical research in medical physics. In many applications of medical synchrotrons, su…
Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements
Andreas Gsponer, Philipp Gaggl, Jürgen Burin +2
Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community…
TCAD Simulations of Radiation Damage in 4H-SiC
Jürgen Burin, Christopher Hahn, Philipp Gaggl +3
To increase the scientific output of particle physics experiments, upgrades are underway at all major accelerator facilities to significantly improve the luminosity. Consequently,…