5 citations · 13 across the 15 of their papers we have counts for
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Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements
Andreas Gsponer, Philipp Gaggl, Jürgen Burin +2
Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community…
TCAD Parameters for 4H-SiC: A Review
Jürgen Burin, Philipp Gaggl, Simon Waid +2
In this literature review we investigate the permittivity, density-of-state mass, band gap, impact ionization, charge carrier recombination, incomplete ionization and mobility in 4…
TCAD Simulations of Radiation Damage in 4H-SiC
Jürgen Burin, Christopher Hahn, Philipp Gaggl +3
To increase the scientific output of particle physics experiments, upgrades are underway at all major accelerator facilities to significantly improve the luminosity. Consequently,…
The ECFA Early-Career Researchers Panel: Report for the year 2023
Julia Allen, Bruno Alves, Jan-Hendrik Arling +67
The European Committee for Future Accelerators (ECFA) Early-Career Researcher (ECR) panel, which represents the interests of the ECR community to ECFA, presents in this document it…
TCAD modeling of radiation-induced defects in 4H-SiC diodes
Philipp Gaggl, Jürgen Burin, Andreas Gsponer +3
Silicon Carbide (SiC) has several advantageous properties compared to Silicon (Si) that make it an appealing detector material, such as a larger charge carrier saturation velocity,…