2 citations · 5 across the 7 of their papers we have counts for
7 papers
Capacitance-voltage profiling techniques for characterization of semiconductor materials and devices
Miron J Cristea
This work re-defines the well-known C/V (capacitance-voltage) measurement technique, in the view of a new physics formula, discovered in 2006 by the same author.
Unified Model for P-N Junction Current-Voltage Characteristics
Miron J. Cristea
The current-voltage p-n junction characteristics were mainly analyzed until now at low injection levels and high level injection separately. This work unifies the low injection, me…
Analytical formula and measurement technique for the built-in potential of practical diffused semiconductor junctions
Miron J. Cristea
Based on the Gauss law for the electric field, a new integral formula is deduced together with one of its possible applications, in the area of semiconductor junctions, specificall…
Analytical determination of the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors and Punch Through-IGBTs
Miron J. Cristea
In this work, an analytical formula that gives the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors, Punch Through-IGBTs and other devices with similar…
First time calculation of the depletion region width and barrier capacitance of practical diffused semiconductor junctions
Miron J. Cristea
Based on semiconductor materials fundamental equations, the calculation of the depletion region width and barrier capacitance of practical diffused -Gaussian profile- semiconductor…
The Shockley-type boundary conditions for semiconductor p-n junctions at medium and high injection levels
Miron J. Cristea
The classical Shockley boundary conditions are used for the determination of the minority carrier concentrations at the edges of the space-charge region of semiconductor p-n juncti…