Analytical formula and measurement technique for the built-in potential of practical diffused semiconductor junctions
arXiv:cond-mat/0702324
Abstract
Based on the Gauss law for the electric field, a new integral formula is deduced together with one of its possible applications, in the area of semiconductor junctions, specifically an analytical formula for the built-in potential of diffused semiconductor junctions. The measurement technique for the determination of the built-in voltage is also described.
4 pages