Analytical determination of the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors and Punch Through-IGBTs

Abstract

In this work, an analytical formula that gives the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors, Punch Through-IGBTs and other devices with similar structure is deduced for the first time.

4 pages, 1 figure

References in corpus (2)

• Integral formulas for electrically charged space regions - theory and application
• First time calculation of the depletion region width and barrier capacitance of practical diffused semiconductor junctions