Rotational stacking and its electronic effects on graphene films grown on 4H-SiC$(000\bar{1})$

J. Hass, F. Varchon, J. E. Millan-Otoya +6

We examine the stacking order of multilayer graphene grown on the SiC$(000\bar{1})$ surface using low-energy electron diffraction and surface X-ray diffraction. We show that the fi…