875 citations · 2.3k across the 7 of their papers we have counts for
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Structure and electronic properties of epitaxial graphene grown on SiC
M. Sprinkle, J. Hicks, A. Tejeda +11
We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the unders…
The interface structure of epitaxial graphene grown on 4H-SiC(0001)
J. Hass, J. E. Millan-Otoya, P. N. First +1
We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two…
Rotational stacking and its electronic effects on graphene films grown on 4H-SiC
J. Hass, F. Varchon, J. E. Millan-Otoya +6
We examine the stacking order of multilayer graphene grown on the SiC surface using low-energy electron diffraction and surface X-ray diffraction. We show that the fi…
The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction
J. Hass, R. Feng, J. E. Millan-Otoya +6
We present a structural analysis of the multi-layer graphene-4HSiC(000-1}) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-te…
Electronic structure of epitaxial graphene layers on SiC: effect of the substrate
François Varchon, R. Feng, J. Hass +8
Recent transport measurements on thin graphite films grown on SiC show large coherence lengths and anomalous integer quantum Hall effects expected for isolated graphene sheets. Thi…
Highly-ordered graphene for two dimensional electronics
J. Hass, C. A. Jeffrey, R. Feng +7
With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ul…