5 papers
Inverse orbital Hall effect induced terahertz emission enabled by a ferromagnet with quenched orbital moment in Fe/Pt/W trilayers
Chao Zhou, Lei Hao, Shaohua Zhang +10
The inverse orbital Hall effect (IOHE) has recently attracted considerable attention as an emerging mechanism for terahertz (THz) emission based on ultrafast angular-momentum-to-ch…
Decoupling effects of the resistive-switching behavior on the polarization reversal in ultrathin ferroelectric Hf0.5Zr0.5O2 films
Chao Zhou, Sizhe Huang, Yangyang Si +10
HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memo…
Enhancing ferroelectric stability: Wide-range of adaptive control in epitaxial HfO2/ZrO2 superlattices
Jingxuan Li, Shiqing Deng, Liyang Ma +12
The metastability of the polar phase in HfO2, despite its excellent compatibility with the complementary metal-oxide-semiconductor process, remains a key obstacle for its industria…
Ideal antiferroelectricity with large digital electrostrain in PbZrO3 epitaxial thin films
Yangyang Si, Ningbo Fan, Yongqi Dong +13
Antiferroelectrics exhibit reversible antipolar-polar phase transitions under electric fields, yielding large electrostrain suitable for electromechanical devices. Nevertheless, in…
Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design
Chao Zhou, Yanpeng Feng, Liyang Ma +10
Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectrics are promising candidates for next-generation memory devices. However, their commercialization has bee…