15 citations · 17 across the 9 of their papers we have counts for
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Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering
Hao Xiong, Huazhang Zhang, Liang Shu +16
Antiferroelectrics exhibit reversible antipolar-polar transformations, offering a compelling platform for multiple functionalities in modern nanoelectronics, yet deterministic cont…
Inverse orbital Hall effect induced terahertz emission enabled by a ferromagnet with quenched orbital moment in Fe/Pt/W trilayers
Chao Zhou, Lei Hao, Shaohua Zhang +10
The inverse orbital Hall effect (IOHE) has recently attracted considerable attention as an emerging mechanism for terahertz (THz) emission based on ultrafast angular-momentum-to-ch…
Long-range orbital transport and inverse orbital Hall effect in Co/Ru-based terahertz emitters
Zhou Chao, Zhang Shaohua, Hao Lei +10
The utilization of terahertz (THz) emission spectroscopy in femtosecond photoexcited spintronic heterostructures has emerged as a versatile tool for investigating ultrafast spin-tr…
Decoupling effects of the resistive-switching behavior on the polarization reversal in ultrathin ferroelectric Hf0.5Zr0.5O2 films
Chao Zhou, Sizhe Huang, Yangyang Si +10
HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memo…
Enhancing ferroelectric stability: Wide-range of adaptive control in epitaxial HfO2/ZrO2 superlattices
Jingxuan Li, Shiqing Deng, Liyang Ma +12
The metastability of the polar phase in HfO2, despite its excellent compatibility with the complementary metal-oxide-semiconductor process, remains a key obstacle for its industria…
Ideal antiferroelectricity with large digital electrostrain in PbZrO3 epitaxial thin films
Yangyang Si, Ningbo Fan, Yongqi Dong +13
Antiferroelectrics exhibit reversible antipolar-polar phase transitions under electric fields, yielding large electrostrain suitable for electromechanical devices. Nevertheless, in…
Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design
Chao Zhou, Yanpeng Feng, Liyang Ma +10
Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectrics are promising candidates for next-generation memory devices. However, their commercialization has bee…
Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping
Chao Zhou, Liyang Ma, Yanpeng Feng +13
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polariza…
Theoretical lower limit of coercive field in ferroelectric hafnia
Jiyuan Yang, Jing Wu, Jingxuan Li +4
The high coercive field () of hafnia-based ferroelectrics presents a major obstacle to their applications. The ferroelectric switching mechanisms in hafnia that dictate ,…