15 citations · 17 across the 9 of their papers we have counts for
Showing 2024Show all
2 papers · 1 filter
cond-mat.mtrl-sci2024★ 2 cited
Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping
Chao Zhou, Liyang Ma, Yanpeng Feng +13
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polariza…
cond-mat.mtrl-sci2024★ 15 cited
Theoretical lower limit of coercive field in ferroelectric hafnia
Jiyuan Yang, Jing Wu, Jingxuan Li +4
The high coercive field () of hafnia-based ferroelectrics presents a major obstacle to their applications. The ferroelectric switching mechanisms in hafnia that dictate ,…