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cond-mat.mtrl-sci2024
Atomically Flat Dielectric Patterns for Band Gap Engineering and Lateral Junction Formation in MoSe Monolayers
Philipp Moser, Lukas M. Wolz, Alex Henning +9
Combining a precise sputter etching method with subsequent AlO growth within an atomic layer deposition chamber enables fabrication of atomically flat lateral patterns of SiO$_…
cond-mat.mes-hall2024
Polarons shape the interlayer exciton emission of MoSe/WSe heterobilayers
Pedro Soubelet, Alex Delhomme, Andreas V. Stier +1
We present time-resolved and CW optical spectroscopy studies of interlayer excitons (IXs) in 2 and 3stacked MoSe/WSe heterobilayers and obtain evidence for the stro…