activity
20242026
most citedUnveiling the growth mode diagram of GaSe on sapphire

3 citations · 4 across the 5 of their papers we have counts for

collaborators

6 papers

physics.app-ph2026

Si- and C-Induced Modifications in Vapor-Solid-Grown InGaAs Nanowires: From Crystal Structure to Carrier Dynamics

Hamidreza Esmaielpour, Leopold Rothmayer, Thomas Trinkl +5

Determining the impact of dopants in ternary III-V nanowires (NWs) is crucial for their applications in next-generation optoelectronic and photonic devices; however, the interplay…

physics.app-ph2026

Monolithic axial InGaAs quantum dot emitters in GaAs-based nanowires via Sb-mediated facet engineering

Hyowon W. Jeong, Aris Koulas-Simos, Imad Limame +6

GaAs-based nanowires hosting active quantum heterostructures provide a promising route toward monolithic integration of single-photon sources on silicon, a key requirement for scal…

cond-mat.mtrl-sci2025★ 3 cited

Unveiling the growth mode diagram of GaSe on sapphire

M. Bissolo, M. Dembecki, J. Belz +10

The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technol…

physics.app-ph2024★ 1 cited

Competing mechanisms of dominant radiative and Auger recombination in hot carrier generation in III-V semiconductor nanowires

Hamidreza Esmaielpour, Paul Schmiedeke, Nabi Isaev +4

One-dimensional structures such as nanowires (NWs) show great promise in tailoring the rates of hot carrier thermalization in semiconductors with important implications for the des…

cond-mat.mes-hall2024

MBE-grown virtual substrates for quantum dots emitting in the telecom O- and C-bands

Bianca Scaparra, Elise Sirotti, Akhil Ajay +9

InAs semiconductor quantum dots (QDs) emitting in the near infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization…

cond-mat.mes-hall2024

Influence of Auger heating and Shockley-Read-Hall recombination on hot carrier dynamics in InGaAs nanowires

Hamidreza Esmaielpour, Nabi Isaev, Jonathan J. Finley +1

Understanding the origin of hot carrier relaxation in nanowires (NWs) with one-dimensional (1D) geometry is significant for designing efficient hot carrier solar cells with such na…