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physics.app-ph2026
Si- and C-Induced Modifications in Vapor-Solid-Grown InGaAs Nanowires: From Crystal Structure to Carrier Dynamics
Hamidreza Esmaielpour, Leopold Rothmayer, Thomas Trinkl +5
Determining the impact of dopants in ternary III-V nanowires (NWs) is crucial for their applications in next-generation optoelectronic and photonic devices; however, the interplay…
physics.app-ph2026
Monolithic axial InGaAs quantum dot emitters in GaAs-based nanowires via Sb-mediated facet engineering
Hyowon W. Jeong, Aris Koulas-Simos, Imad Limame +6
GaAs-based nanowires hosting active quantum heterostructures provide a promising route toward monolithic integration of single-photon sources on silicon, a key requirement for scal…