157 citations · 671 across the 34 of their papers we have counts for
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Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures
V. Ryzhii, M. Ryzhii, A. Satou +3
We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due t…
Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection
V. Ryzhii, M. Ryzhii, V. Mitin +2
We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors (G-FET). The instability is…
S-shaped current-voltage characteristics of n+-i-n-n+ graphene field-effect transistors due the Coulomb drag of quasi-equilibrium electrons by ballistic electrons
V. Ryzhii, M. Ryzhii, V. Mitin +2
We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n-i-n-n graphene field-effect transistors (G-FET) might lea…
Modulation characteristics of uncooled graphene photodetectors
V. Ryzhii, M. Ryzhii, T. Otsuji +3
We analyze the modulation characteristics of the uncooled terahertz (THz) and infrared (IR) detectors using the variation of the density and effective temperature of the two-dimens…