activity
20072024
most citedA Graphene Field-Effect Device

1.1k citations · 7.1k across the 72 of their papers we have counts for

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Showing 2022 · physics.app-phShow all

6 papers · 2 filters

physics.app-ph2022★ 22 cited

Large Scale Integration of Graphene Transistors for Potential Applications in the Back End of the Line

A. D. Smith, S. Vaziri, S. Rodriguez +2

A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semi…

physics.app-ph2022★ 19 cited

Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements

Sebastian Wittmann, Stephan Pindl, Simon Sawallich +6

Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based electronic devices typically requires graphene transfer from its growth substrate…

physics.app-ph2022★ 22 cited

AFM-based Hamaker Constant Determination with Blind Tip Reconstruction

Benny Ku, Ferdinandus van de Wetering, Jens Bolten +3

Particle contamination of extreme ultraviolet (EUV) photomasks is one of the numerous challenges in nanoscale semiconductor fabrication, since it can lead to systematic device fail…

physics.app-ph2022★ 26 cited

Graphene coating of Nafion membranes for enhanced fuel cell performance

Jasper Ruhkopf, Ulrich Plachetka, Michael Moeller +9

Electrochemically exfoliated graphene (e-G) thin films on Nafion membranes exhibit a selective barrier effect against undesirable fuel crossover. The approach combines the…

physics.app-ph2022★ 25 cited

Role of substrate surface morphology on the performance of graphene inks for flexible electronics

Jasper Ruhkopf, Simon Sawallich, Michael Nagel +6

Two-dimensional (2D) materials, such as graphene, are seen as potential candidates for fabricating electronic devices and circuits on flexible substrates. Inks or dispersions of 2D…

physics.app-ph2022★ 28 cited

Zero Bias Power Detector Circuits based on MoS Field Effect Transistors on Wafer-Scale Flexible Substrates

Eros Reato, Paula Palacios, Burkay Uzlu +13

We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS field effect transistors (FETs). The MoS…