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All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts
Himadri Pandey, Mehrdad Shaygan, Simon Sawallich +8
We report on the fabrication and characterization of field effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitri…
Overlay Accuracy Limitations of Soft Stamp UV Nanoimprint Lithography and Circumvention Strategies for Device Applications
Piotr Jacek Cegielski, Jens Bolten, Jung Wuk Kim +5
In this work multilevel pattering capabilities of Substrate Conformal Imprint Lithography (SCIL) have been explored. A mix & match approach combining the high throughput of nanoimp…
High Responsivity and Quantum Efficiency of Graphene / Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions
Sarah Riazimehr, Satender Kataria, Jose-Maria González-Medina +6
Graphene / silicon (G/Si) heterostructures have been studied extensively in the past years for applications such as photodiodes, photodetectors and solar cells, with a growing focu…
Ultra Low Specific Contact Resistivity in Metal-Graphene Junctions via Atomic Orbital Engineering
Vikram Passi, Amit Gahoi, Enrique G. Marin +5
A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to…