103 citations · 309 across the 10 of their papers we have counts for
8 papers · 1 filter
Highly parallelizable electronic transport calculations in periodic Rhodium and Copper nanostructures
Shifeng Zhu, Baruch Feldman, Scott Dunham
We extend the highly-parallelizable open-source electronic transport code TRANSEC to perform real-space atomic-scale electronic transport calculations with periodic boundary condit…
A real-space method for highly parallelizable electronic transport calculations
Baruch Feldman, Tamar Seideman, Oded Hod +1
We present a real-space method for first-principles nano-scale electronic transport calculations. We use the non-equilibrium Green's function method with density functional theory…
First Principle-based Analysis of Single-Walled Carbon Nanotube and Silicon Nanowire Junctionless Transistors
Lida Ansari, Baruch Feldman, Giorgos Fagas +5
Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain…
Transport properties and electrical device characteristics with the TiMeS computational platform: application in silicon nanowires
Dimpy Sharma, Lida Ansari, Baruch Feldman +3
Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemica…
Simulations of gated Si nanowires and 3-nm junctionless transistors
Lida Ansari, Baruch Feldman, Giorgos Fagas +2
Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless…
Grain boundary effects on electronic transport in metals
Baruch Feldman, Seongjun Park, Michael Haverty +2
We present quantum-based simulations of single grain boundary reflectivity of electrons in metals, Cu and Ag. We examine twin and non-twin grain boundaries using non-equilibrium Gr…