activity
20062022
most citedSimulations of gated Si nanowires and 3-nm junctionless transistors

103 citations · 309 across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mes-hall2022

Highly parallelizable electronic transport calculations in periodic Rhodium and Copper nanostructures

Shifeng Zhu, Baruch Feldman, Scott Dunham

We extend the highly-parallelizable open-source electronic transport code TRANSEC to perform real-space atomic-scale electronic transport calculations with periodic boundary condit…

physics.comp-ph2016★ 6 cited

A partitioned shift-without-invert algorithm to improve parallel eigensolution efficiency in real-space electronic transport

Baruch Feldman, Yunkai Zhou

We present an eigenspectrum partitioning scheme without inversion for the recently described real-space electronic transport code, TRANSEC. The primary advantage of TRANSEC is its…

cond-mat.mes-hall2014★ 15 cited

A real-space method for highly parallelizable electronic transport calculations

Baruch Feldman, Tamar Seideman, Oded Hod +1

We present a real-space method for first-principles nano-scale electronic transport calculations. We use the non-equilibrium Green's function method with density functional theory…

cond-mat.mes-hall2013★ 16 cited

First Principle-based Analysis of Single-Walled Carbon Nanotube and Silicon Nanowire Junctionless Transistors

Lida Ansari, Baruch Feldman, Giorgos Fagas +5

Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain…

cond-mat.mes-hall2013★ 12 cited

Transport properties and electrical device characteristics with the TiMeS computational platform: application in silicon nanowires

Dimpy Sharma, Lida Ansari, Baruch Feldman +3

Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemica…

cond-mat.mes-hall2010★ 103 cited

Simulations of gated Si nanowires and 3-nm junctionless transistors

Lida Ansari, Baruch Feldman, Giorgos Fagas +2

Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless…