187 citations · 222 across the 11 of their papers we have counts for
5 papers · 2 filters
Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature
Timo Steidl, Pierre Kuna, Erik Hesselmeier-Hüttmann +10
Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature…
Quantum bit with telecom wave-length emission from a simple defect in Si
Peter Deák, Song Li, Adam Gali
Spin-to-photon interfaces from defects in silicon hold great promise towards realizing quantum repeaters with the combination of advanced semiconductor and photonics technologies.…
Hopping of the center-of-mass of single G centers in silicon-on-insulator
Alrik Durand, Yoann Baron, Péter Udvarhelyi +15
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metasta…
Quantum communication networks with defects in silicon carbide
Philipp Sohr, Philipp Koller, Sebastian Ecker +23
Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations…
Precise characterization of a silicon carbide waveguide fiber interface
Marcel Krumrein, Raphael Nold, Flavie Davidson-Marquis +13
Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into effic…