187 citations · 623 across the 23 of their papers we have counts for
3 papers · 1 filter
Subband engineering for p-type silicon ultra-thin layers for increased carrier velocities: An atomistic analysis
Neophytos Neophytou, Gerhard Klimeck, Hans Kosina
Ultra-thin-body (UTB) channel materials of a few nanometers in thickness are currently considered as candidates for future electronic, thermoelectric, and optoelectronic applicatio…
Atomistic approach to alloy scattering in
Saumitra R Mehrotra, Abhijeet Paul, Gerhard Klimeck
SiGe alloy scattering is of significant importance with the introduction of strained layers and SiGe channels into CMOS technology. However, alloy scattering has till now been trea…
Engineered valley-orbit splittings in quantum confined nanostructures in silicon
R. Rahman, J. Verduijn, N. Kharche +4
An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum con…