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20032020
most citedBandstructure Effects in Silicon Nanowire Electron Transport

187 citations · 623 across the 22 of their papers we have counts for

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5 papers · 1 filter

physics.app-ph2020

Doping profile engineered triple heterojunction TFETs with 12 nm body thickness

Chin-Yi Chen, Hsin-Ying Tseng, Hesameddin Ilatikhameneh +4

Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges…

physics.app-ph2020

Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation

Chin-Yi Chen, Hesameddin Ilatikhameneh, Jun Z. Huang +2

The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of…

physics.app-ph2019

Thermal boundary resistance predictions with non-equilibrium Green's function and molecular dynamics simulations

Yuanchen Chu, Jingjing Shi, Kai Miao +6

The non-equilibrium Green's function (NEGF) method with Büttiker probe scattering self-energies is assessed by comparing its predictions for the thermal boundary resistance with mo…

physics.app-ph2018

Studies of two-dimensional MoS2 on enhancing the electrical performance of ultrathin copper films

Tingting Shen, Daniel Valencia, Qingxiao Wang +6

Copper nanowires are widely used as on-chip interconnects due to superior conductivity. However, with aggressive Cu interconnect scaling, the diffusive surface scattering of electr…

physics.app-ph2018

Explicit screening full band quantum transport model for semiconductor nanodevices

Yuanchen Chu, Prasad Sarangapani, James Charles +2

State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that en…