187 citations · 421 across the 14 of their papers we have counts for
12 papers · 1 filter
Subband engineering for p-type silicon ultra-thin layers for increased carrier velocities: An atomistic analysis
Neophytos Neophytou, Gerhard Klimeck, Hans Kosina
Ultra-thin-body (UTB) channel materials of a few nanometers in thickness are currently considered as candidates for future electronic, thermoelectric, and optoelectronic applicatio…
Atomistic approach to alloy scattering in
Saumitra R Mehrotra, Abhijeet Paul, Gerhard Klimeck
SiGe alloy scattering is of significant importance with the introduction of strained layers and SiGe channels into CMOS technology. However, alloy scattering has till now been trea…
Engineered valley-orbit splittings in quantum confined nanostructures in silicon
R. Rahman, J. Verduijn, N. Kharche +4
An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum con…
Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs
Giuseppe Carlo Tettamanzi, Abhijeet Paul, Sunhee Lee +5
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence o…
Spin-orbit splittings in Si/SiGe quantum wells
M. Prada, G. Klimeck, R. Joynt
We present a calculation of the wavevector-dependent subband level splitting from spin-orbit coupling in Si/SiGe quantum wells. We first use the effective-mass approach, where the…
Design space for low sensitivity to size variations in [110] PMOS nanowire devices: The implications of anisotropy in the quantization mass
Neophytos Neophytou, Gerhard Klimeck
A 20-band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding model is used with a semi-classical, ballistic, field-effect-transistor (FET) model, to examine the ON…