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Landau-like formalism for the thermal-runaway and filamentation instabilities in switching Mott devices
Aniket Bajaj, Anudeep Tullibilli, Arup Basak +2
Correlated oxides can switch to a low-resistance state when exposed to a voltage, making these insulator-to-metal transition materials promising candidates for memristor technology…
Nature of the 175-180 cm Raman Feature in Altermagnetic -MnTe
Pankaj Bhardwaj, Rajib Sarkar, Naresh Shyaga +6
The 175 cm Raman mode in -MnTe has long been assigned to the material's only symmetry-allowed phonon (), yet first-principles calculations consistently place this…
Operando Surface Probe Microscopy Reveals Electrochemical Origins of Reliability Variability in Hafnia Ferroelectrics
Anudeep Tullibilli, Kartick Biswas, Shubham Kumar Parate +1
Device-to-device and sample-to-sample variability remains a major obstacle to the reliable implementation of hafnia-based ferroelectrics, even in nominally identical structures fab…
Interplay of spin-lattice and electronic coupling far above Neel ordering in 2D antiferromagnetic CrPS4 and its interface manifestation
Divya Jangra, Binoy Krishna De, Mukesh Kumar Dasoundhi +13
A short-range spin correlation driven, strongly intercoupled spin-phonon-electronic state far above TN (~38K) is identified in the low dimensional van der Waals antiferromagnet CrP…
Room-Temperature Electric-Field Control of Anomalous Hall Effect in Py/BTO/LSMO Heterostructures
Kusampal Yadav, Kousik Das, Aditya Raj +7
We demonstrate room temperature electric field control of the anomalous Hall effect in epitaxial Ni80Fe20 (Py) BaTiO3 (BTO) La0.7Sr0.3MnO3 (LSMO) thin film heterostructures grown o…
Large Pyroelectric Enhancement in Freestanding Epitaxial BaTiO3 Membranes on Si
Ajay Kumar, Asraful Haque, Shubham Kumar Parate +5
Ferroelectric membranes transferred onto arbitrary substrates provide reduced mechanical clamping at the interfaces that can diminish the effective polarization-rotation barrier of…