1 citations · 1 across the 13 of their papers we have counts for
5 papers · 1 filter
Interfacial and bulk switching MoS2 memristors for an all-2D reservoir computing framework
Asmita S. Thool, Sourodeep Roy, Prahalad Kanti Barman +5
In this study, we design a reservoir computing (RC) network by exploiting short- and long-term memory dynamics in Au/Ti/MoS/Au memristive devices. The temporal dynamics is engi…
Field-induced reversible phase transition and negative differential resistance in In2Se3 ferroelectric semiconducting FETs
Jishnu Ghosh, Shubham Parate, Arup Basak +6
Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlay…
Anion Doping Driven Non-Ferroelectric-to-Ferroelectric Phase Transition in Epitaxial Y:HfO2
Soumyajyoti Mondal, Binoy Krishna De, Asraful Haque +10
Oxygen vacancies are often essential for stabilizing the orthorhombic ferroelectric phase in HfO2, with cationic doping widely employed to introduce such defects. In contrast, syst…
Synchronous polarization switching at sub-coercive fields through stochastic resonance in ferroelectric thin-film capacitors
Vivek Dey, Thejas Basavarajappa, Manikantan R. S. +4
Stochastic resonance (SR) is a phenomenon by which the presence of noise in a non-linear system allows for detection of a weak sub-threshold signal, or in a bi-stable system allows…
Reactive Glass Metal Interaction under Ambient Conditions Enables Surface Modification of Gold Nanoislands
Sinorul Haque, Shweta R. Keshri, G. Ganesh +13
Stabilizing gold nanoparticles with tunable surface composition via reactive metal support interactions under ambient conditions remains a significant challenge. We discovered that…