activity
20242026
most citedRecord cryogenic cooling in ferroelectric hafnia proximity induced via Mott transition

1 citations · 1 across the 13 of their papers we have counts for

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cond-mat.mtrl-sci2024

Epitaxial growth and stabilization of perovskite phase EuNiO3 thin films through RF sputtering

Prashanth S, Binoy Krishna De, Shubham Kumar Parate +2

Phase change materials (PCMs) that exhibit volatile resistive switching are promising for emulating neuronal oscillators. Charge transfer insulators, such as ReNiO3 (where Re repre…

cond-mat.mtrl-sci2024

Wavelength-dependent anisotropic light-matter interaction in 2D ferroelectric In2Se3

Divya Jangra, Binoy Krishna De, Pragati Sharma +8

The anisotropic light-matter interactions in 2D materials have garnered significant attention for their potential to develop futuristic polarization-based optoelectronic devices, s…

cond-mat.mtrl-sci2024

Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si

Binoy Krishna De, V. G. Sathe, Divya +5

Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often…

cond-mat.dis-nn2024

Network-theory based modeling of avalanche dynamics in percolative tunnelling networks

Vivek Dey, Steffen Kampman, Rafael Gutierrez +2

Brain-like self-assembled networks can infer and analyze information out of unorganized noisy signals with minimal power consumption. These networks are characterized by spatiotemp…

cond-mat.mtrl-sci2024★ 1 cited

Record cryogenic cooling in ferroelectric hafnia proximity induced via Mott transition

Jalaja M A, Shubham Kumar Parate, Binoy Krishna De +2

On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced ele…