activity
20232026
most citedRecord cryogenic cooling in ferroelectric hafnia proximity induced via Mott transition

1 citations · 1 across the 11 of their papers we have counts for

collaborators

12 papers

cond-mat.mtrl-sci2026

Operando Surface Probe Microscopy Reveals Electrochemical Origins of Reliability Variability in Hafnia Ferroelectrics

Anudeep Tullibilli, Kartick Biswas, Shubham Kumar Parate +1

Device-to-device and sample-to-sample variability remains a major obstacle to the reliable implementation of hafnia-based ferroelectrics, even in nominally identical structures fab…

cond-mat.mtrl-sci2026

Large Pyroelectric Enhancement in Freestanding Epitaxial BaTiO3 Membranes on Si

Ajay Kumar, Asraful Haque, Shubham Kumar Parate +5

Ferroelectric membranes transferred onto arbitrary substrates provide reduced mechanical clamping at the interfaces that can diminish the effective polarization-rotation barrier of…

cond-mat.mtrl-sci2025

Field-induced reversible phase transition and negative differential resistance in In2Se3 ferroelectric semiconducting FETs

Jishnu Ghosh, Shubham Parate, Arup Basak +6

Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlay…

cond-mat.mtrl-sci2025

A facile vector substrate platform via BaTiO3 membrane transfer enables high quality solution processed epitaxial PZT on silicon

Asraful Haque, Antony Jeyaseelan, Shubham Kumar Parate +2

The direct integration of high-performance ferroelectric oxides with silicon remains challenging due to lattice mismatch, thermal incompatibility, and the need for high-temperature…

cond-mat.mtrl-sci2025

Anion Doping Driven Non-Ferroelectric-to-Ferroelectric Phase Transition in Epitaxial Y:HfO2

Soumyajyoti Mondal, Binoy Krishna De, Asraful Haque +10

Oxygen vacancies are often essential for stabilizing the orthorhombic ferroelectric phase in HfO2, with cationic doping widely employed to introduce such defects. In contrast, syst…

cond-mat.mtrl-sci2024

Epitaxial growth and stabilization of perovskite phase EuNiO3 thin films through RF sputtering

Prashanth S, Binoy Krishna De, Shubham Kumar Parate +2

Phase change materials (PCMs) that exhibit volatile resistive switching are promising for emulating neuronal oscillators. Charge transfer insulators, such as ReNiO3 (where Re repre…

cond-mat.mtrl-sci2024

Wavelength-dependent anisotropic light-matter interaction in 2D ferroelectric In2Se3

Divya Jangra, Binoy Krishna De, Pragati Sharma +8

The anisotropic light-matter interactions in 2D materials have garnered significant attention for their potential to develop futuristic polarization-based optoelectronic devices, s…

cond-mat.mtrl-sci2024

Free Standing Epitaxial Oxides Through Remote Epitaxy: The Role of the Evolving Graphene Microstructure

Asraful Haque, Suman Kumar Mandal, Shubham Kumar Parate +4

Remote epitaxy has garnered considerable attention as a promising method that facilitates the growth of thin films that replicate the crystallographic characteristics of a substrat…

cond-mat.mtrl-sci2024

Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si

Binoy Krishna De, V. G. Sathe, Divya +5

Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often…

physics.app-ph2024

Heterogeneous integration of high endurance ferroelectric and piezoelectric epitaxial BaTiO devices on Si

Asraful Haque, Harshal Jason D'Souza, Shubham Kumar Parate +3

Integrating epitaxial BaTiO (BTO) with Si is essential for leveraging its ferroelectric, piezoelectric, and nonlinear optical properties in microelectronics. Recently, heteroge…

cond-mat.mtrl-sci2024★ 1 cited

Record cryogenic cooling in ferroelectric hafnia proximity induced via Mott transition

Jalaja M A, Shubham Kumar Parate, Binoy Krishna De +2

On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced ele…

cond-mat.mtrl-sci2023

Giant electromechanical response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si 100

Sandeep Vura, Shubham Kumar Parate, Subhajit Pal +15

Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoe…