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Epitaxial growth and stabilization of perovskite phase EuNiO3 thin films through RF sputtering
Prashanth S, Binoy Krishna De, Shubham Kumar Parate +2
Phase change materials (PCMs) that exhibit volatile resistive switching are promising for emulating neuronal oscillators. Charge transfer insulators, such as ReNiO3 (where Re repre…
Wavelength-dependent anisotropic light-matter interaction in 2D ferroelectric In2Se3
Divya Jangra, Binoy Krishna De, Pragati Sharma +8
The anisotropic light-matter interactions in 2D materials have garnered significant attention for their potential to develop futuristic polarization-based optoelectronic devices, s…
Free Standing Epitaxial Oxides Through Remote Epitaxy: The Role of the Evolving Graphene Microstructure
Asraful Haque, Suman Kumar Mandal, Shubham Kumar Parate +4
Remote epitaxy has garnered considerable attention as a promising method that facilitates the growth of thin films that replicate the crystallographic characteristics of a substrat…
Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si
Binoy Krishna De, V. G. Sathe, Divya +5
Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often…
Heterogeneous integration of high endurance ferroelectric and piezoelectric epitaxial BaTiO devices on Si
Asraful Haque, Harshal Jason D'Souza, Shubham Kumar Parate +3
Integrating epitaxial BaTiO (BTO) with Si is essential for leveraging its ferroelectric, piezoelectric, and nonlinear optical properties in microelectronics. Recently, heteroge…
Record cryogenic cooling in ferroelectric hafnia proximity induced via Mott transition
Jalaja M A, Shubham Kumar Parate, Binoy Krishna De +2
On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced ele…