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Hysteresis in the transfer characteristics of MoS2 transistors
Antonio Di Bartolomeo, Luca Genovese, Filippo Giubileo +4
We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hyster…
Monitoring ion track formation using in situ RBS/c and ERDA
Marko Karlusic, Stjepko Fazinic, Zdravko Siketic +4
The aim of this work is to investigate feasibility of the ion beam analysis techniques for monitoring swift heavy ion track formation. First, use of the in situ Rutherford backscat…
Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors
Antonio Di Bartolomeo, Luca Genovese, Tobias Foller +6
We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensitie…