92 citations · 205 across the 27 of their papers we have counts for
11 papers · 1 filter
Second-Order Optical Nonlinearity of AlScN Films Grown By Molecular Beam Epitaxy
Joongwon Lee, Thai-Son Nguyen, Len van Deurzen +8
Alloys of AlN have rapidly emerged as a material platform for nonlinear optics. In this paper, we measure the second-order optical nonlinearity of AlScN films grown directly on nit…
Low Resistance Non-Alloyed Ohmic Contacts to High Al Composition n-type AlGaN
Joseph E. Dill, Xianzhi Wei, Changkai Yu +6
Ohmic contacts to high (>70\%) Al content n-type AlGaN ultra-wide bandgap semiconductor layers in nitride electronic and photonic devices are typically fabricated by a…
High Mobility Multiple-Channel AlScN/GaN Heterostructures
Aias Asteris, Thai-Son Nguyen, Chuan F. C. Chang +4
Aluminum scandium nitride (AlScN) is a promising barrier material for gallium nitride (GaN)-based transistors for the next generation of radio-frequency electronic devices. In this…
Improved operating voltage in InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates
H-W S. Huang, S. Agrawal, D. Bhattacharya +2
Better wall plug efficiency of deep-ultraviolet light emitting diodes (DUV-LEDs) requires simultaneous low resistivity p-type and n-type contacts, which is a challenging problem. I…
Generalized quantum limits of electrical contact resistance and thermal boundary resistance
Alice Ho, Jashan Singhal, Deji Akinwande +2
The importance of electrical contact resistance and thermal boundary resistance has increased dramatically as devices are scaled to atomic limits. The use of a rich range of materi…
XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
Eungkyun Kim, Yu-Hsin Chen, Naomi Pieczulewski +4
AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effec…
Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
Yu-Hsin Chen, Jimy Encomendero, Huili Grace Xing +1
We report the observation of Shubnikov-de Haas (SdH) oscillations in coherently strained, low-dislocation AlN/GaN/AlN quantum wells (QWs), including both undoped and -doped stru…
Lattice-Matched Multiple Channel AlScN/GaN Heterostructures
Thai-Son Nguyen, Naomi Pieczulewsi, Chandrashekhar Savant +6
AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks…
In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system
Cameron A. Gorsak, Henry J. Bowman, Katie R. Gann +9
In this study, we investigate in situ etching of \b{eta}-Ga2O3 in a metal-organic chemical vapor deposition (MOCVD) system using tert-Butyl chloride (TBCl). We report the successfu…
Ferroelectric AlBN Films by Molecular Beam Epitaxy
Chandrashekhar Savant, Ved Gund, Kazuki Nomoto +13
We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits…
Silicon Implantation and Annealing in -GaO: Role of Ambient, Temperature, and Time
K. R. Gann, N. Pieczulewski1, C. A. Gorsak +9
Optimizing thermal anneals of Si-implanted -GaO is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature…