activity
19982022
most citedExperimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

13.5k citations · 72k across the 139 of their papers we have counts for

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Showing 2011Show all

6 papers · 1 filter

cond-mat.mes-hall2011★ 76 cited

High-resolution spatial mapping of the temperature distribution of a Joule self-heated graphene nanoribbon

Young-Jun Yu, Melinda Y. Han, Stephane Berciaud +5

We investigate the temperature distributions of Joule self-heated graphene nanoribbons (GNRs) with a spatial resolution finer than 100 nm by scanning thermal microscopy (SThM). The…

cond-mat.mtrl-sci2011★ 881 cited

Visualizing Individual Nitrogen Dopants in Monolayer Graphene

Liuyan Zhao, Rui He, Kwang Taeg Rim +15

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy (STM), Raman spectroscopy, x-ray sp…

cond-mat.mes-hall2011★ 32 cited

Multiband Transport in Bilayer Graphene at High Carrier Densities

Dmitri K. Efetov, Patrick Maher, Simas Glinskis +1

We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO solid polymer electrolyte gate we demonstrate the fil…

cond-mat.mes-hall2011★ 20 cited

Bolometric and non-bolometric radio frequency detection in a metallic single-walled carbon nanotube

Daniel F. Santavicca, Joel D. Chudow, Daniel E. Prober +2

We characterize radio frequency detection in a high-quality metallic single-walled carbon nanotube. At a bath temperature of 77 K, only bolometric (thermal) detection is seen. At a…

cond-mat.mtrl-sci2011★ 52 cited

Making ARPES Measurements on Corrugated Monolayer Crystals: Suspended Exfoliated Single-Crystal Graphene

Kevin R. Knox, Andrea Locatelli, Mehmet B. Yilmaz +6

Free-standing exfoliated monolayer graphene is an ultra-thin flexible membrane, which exhibits out of plane deformation or corrugation. In this paper, a technique is described to m…

cond-mat.mes-hall2011★ 77 cited

Graphene field-effect transistors based on boron nitride gate dielectrics

I. Meric, C. R. Dean, A. F. Young +3

Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices ex…