activity
20042023
most citedLasing in topological edge states of a 1D lattice

949 citations · 12.7k across the 161 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

29 papers · 1 filter

cond-mat.mtrl-sci2023

Spin-momentum locking and ultrafast spin-charge conversion in ultrathin epitaxial BiSb topological insulator

E. Rongione, L. Baringthon, D. She +13

The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendic…

cond-mat.mtrl-sci2019★ 14 cited

Quantitative Assessment of Carrier Density by Cathodoluminescence. I. GaAs thin films and modeling

Hung-Ling Chen, Andrea Scaccabarozzi, Romaric De Lépinau +5

Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless charac…

cond-mat.mtrl-sci2019★ 24 cited

Common universal behaviors of magnetic domain walls driven by spin-polarized electrical current and magnetic field

R. Diaz Pardo, N. Moisan, L. Albornoz +3

We explore universal behaviors of magnetic domain wall driven by the spin-transfer of an electrical current, in a ferromagnetic (Ga,Mn)(As,P) thin film with perpendicular magnetic…

cond-mat.mtrl-sci2018★ 38 cited

ARPES and transport studies of the elemental topological insulator -Sn

Quentin Barbedienne, Julien Varignon, Nicolas Reyren +11

Gray tin, also known as -Sn, can be turned into a three-dimensional topological insulator (3D-TI) by strain and finite size effects. Such room temperature 3D-TI is peculiarly in…

cond-mat.mtrl-sci2018★ 32 cited

Resonant magneto-acoustic switching: influence of Rayleigh wave frequency and wavevector

Piotr Kuszewski, Ibrahima S. Camara, Nicolas Biarrotte +6

We show on in-plane magnetized thin films that magnetization can be switched efficiently by 180 degrees using large amplitude Rayleigh waves travelling along the hard or easy magne…

cond-mat.mtrl-sci2016★ 50 cited

Strong reduction of the coercivity by a surface acoustic wave in an out-of-plane magnetized epilayer

Laura Thevenard, Ibrahima Sock Camara, Jean-Yves Prieur +4

Inverse magnetostriction is the effect by which magnetization can be changed upon application of stress/strain. A strain modulation may be created electrically by exciting interdig…

cond-mat.mtrl-sci2015★ 32 cited

Direct measurement of coherent subterahertz acoustic phonons mean free path in GaAs

Romain Legrand, Agnès Huynh, Bernard Jusserand +2

Phonon mean free path is generally inferred from the measurement of thermal conductivity and we are still lacking precise information on this quantity. Recent advances in the field…

cond-mat.mtrl-sci2014★ 1 cited

Current Induced Fingering Instability in Magnetic Domain Walls

Jon Gorchon, Javier Curiale, Andrejs Cebers +4

The shape instability of magnetic domain walls under current is investigated in a ferromagnetic (Ga,Mn)(As,P) film with perpendicular anisotropy. Domain wall motion is driven by th…

cond-mat.mtrl-sci2013★ 96 cited

Irreversible magnetization switching using surface acoustic waves

Laura Thevenard, Catherine Gourdon, Jean-Yves Duquesne +5

An analytical and numerical approach is developped to pinpoint the optimal experimental conditions to irreversibly switch magnetization using surface acoustic waves (SAWs). The lay…

cond-mat.mtrl-sci2012★ 14 cited

Electric-field control of the magnetic anisotropy in an ultrathin (Ga,Mn)As/(Ga,Mn)(As,P) bilayer

Tarik Niazi, Mathieu Cormier, Damien Lucot +4

We report on the electric control of the magnetic anisotropy in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with competing in-plane and out-of-plane anisotropies. Th…

cond-mat.mtrl-sci2011★ 26 cited

Field-induced domain wall propagation: beyond the one-dimensional model

L. Thevenard, C. Gourdon, S. Haghgoo +5

We have investigated numerically the field-driven propagation of perpendicularly magnetized ferromagnetic layers. It was then compared to the historical one-dimensional domain wall…

cond-mat.mtrl-sci2010★ 40 cited

Exchange constant and domain wall width in (Ga,Mn)(As,P) films with self-organization of magnetic domains

Sanaz Haghgoo, Murat Cubukcu, Hans Jürgen Von Bardeleben +3

The incorporation of Phosphorus into (Ga,Mn)As epilayers allows for the tuning of the magnetic easy axis from in-plane to perpendicular-to-plane without the need for a (Ga,In)As te…

cond-mat.mtrl-sci2009★ 39 cited

Magnetic anisotropy of singly Mn-doped InAs/GaAs quantum dots

Olivier Krebs, Emile Benjamin, Aristide Lemaître

We report on the micro-photoluminescence spectroscopy of InAs/GaAs quantum dots (QD) doped by a single Mn atom in a magnetic field either longitudinal or perpendicular to the optic…

cond-mat.mtrl-sci2009★ 27 cited

Hyperfine interaction in InAs/GaAs self-assembled quantum dots : dynamical nuclear polarization versus spin relaxation

O. Krebs, B. Eble, A. Lemaître +4

We report on the influence of hyperfine interaction on the optical orientation of singly charged excitons X+ and X- in self-assembled InAs/GaAs quantum dots. All measurements were…

cond-mat.mtrl-sci2008★ 43 cited

Field-Driven Domain-Wall Dynamics in GaMnAs Films with Perpendicular Anisotropy

Alexandre Dourlat, Vincent Jeudy, Aristide Lemaître +1

We combine magneto-optical imaging and a magnetic field pulse technique to study domain wall dynamics in a ferromagnetic (Ga,Mn)As layer with perpendicular easy axis. Contrary to u…

cond-mat.mtrl-sci2008★ 65 cited

Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers

Aristide Lemaître, Audrey Miard, Laurent Travers +6

A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or…

cond-mat.mtrl-sci2008★ 367 cited

Controlled light-matter coupling for a single quantum dot embedded in a pillar microcavity using far-field optical lithography

A. Dousse, L. Lanco, J. Suffczynski +7

Using far field optical lithography, a single quantum dot is positioned within a pillar microcavity with a 50 nm accuracy. The lithography is performed in-situ at 10 K while measur…

cond-mat.mtrl-sci2007★ 128 cited

Microcavity polariton light emitting diode

Daniele Bajoni, Elizaveta Semenova, Aristide Lemaître +4

Cavity polaritons have been shown these last years to exhibit a rich variety of non-linear behaviors which could be used in new polariton based devices. Operation in the strong cou…

cond-mat.mtrl-sci2007★ 143 cited

Optically probing the fine structure of a single Mn atom in an InAs quantum dot

A. Kudelski, A. Lemaître, A. Miard +4

We report on the optical spectroscopy of a single InAs/GaAs quantum dot (QD) doped with a single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the…

cond-mat.mtrl-sci2007★ 35 cited

Determination of the micromagnetic parameters in (Ga,Mn)As using domain theory

Catherine Gourdon, Alexandre Dourlat, Vincent Jeudy +4

The magnetic domain structure and magnetic properties of a ferromagnetic (Ga,Mn)As epilayer with perpendicular magnetic easy-axis are investigated. We show that, despite strong hys…

cond-mat.mtrl-sci2007★ 447 cited

Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

Daniele Bajoni, Pascale Senellart, Esther Wertz +4

Polariton lasing is demonstrated on the zero dimensional states of single GaAs/GaAlAs micropillar cavities. Under non resonant excitation, the measured polariton ground state occup…

cond-mat.mtrl-sci2007★ 100 cited

Photon lasing in a GaAs microcavity: similarities with a polariton condensate

Daniele Bajoni, Pascale Senellart, Aristide Lemaître +1

We study experimentally the lasing regime of a GaAs based microcavity sample under strong optical pumping. The very same sample exhibits the strong coupling regime at low excitatio…

cond-mat.mtrl-sci2007★ 15 cited

Magnetic patterning of (Ga,Mn)As by hydrogen passivation

Laura Thevenard, Audrey Miard, Laurent Vila +5

We present an original method to magnetically pattern thin layers of (Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the hole density, and thereby locally…

cond-mat.mtrl-sci2007

Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties

M. Elsen, H. Jaffres, R. Mattana +3

We present magnetic and tunnel transport properties of (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetizatio…