S. Rebollo

activity

20222024

most citedRecord-High Electron Mobility and Controlled Low 10

^{15}

^{- 3}

Si-doping in (010)

β

-Ga

_{2}

_{3}

Epitaxial Drift Layers

36 citations · 37 across the 3 of their papers we have counts for

collaborators

3 papers

physics.app-ph2024★ 36 cited

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $β$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers

Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit +7

We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 $μ$ m thick $β$ -Ga $_{2}$ O $_{3}$ films with electron concentrations in the 10 $^{15}$ cm$^{…

physics.app-ph2023★ 1 cited

Over 6 $μ$ m thick MOCVD-grown Low-Background Carrier Density (10 $^{15}$ cm $^{- 3}$ ) High-Mobility (010) $β$ -Ga $_{2}$ O $_{3}$ Drift Layers

Arkka Bhattacharyya, Carl Peterson, Kittamet Chanchaiworawit +4

This work reports high carrier mobilities and growth rates, simultaneously in low unintentionally-doped UID (10 $^{15}$ cm $^{- 3}$ ) MOCVD-grown thick $β$ -Ga $_{2}$ O $_{3}$ epitaxial drift…

cond-mat.mtrl-sci2022

Enhancing the Electron Mobility in Si-doped (010) $β$ -Ga $_{2}$ O $_{3}$ films with Low-Temperature Buffer Layers

Arkka Bhattacharyya, Carl Peterson, Takeki Itoh +6

We demonstrate a new substrate cleaning and buffer growth scheme in $β$ -Ga $_{2}$ O $_{3}$ epitaxial thin films using metalorganic vapor phase epitaxy (MOVPE). For the channel structure,…

Record-High Electron Mobility and Controlled Low 1015 cm−3 Si-doping in (010) β-Ga2​O3​ Epitaxial Drift Layers

Over 6 μm thick MOCVD-grown Low-Background Carrier Density (1015 cm−3) High-Mobility (010) β-Ga2​O3​ Drift Layers

Enhancing the Electron Mobility in Si-doped (010) β-Ga2​O3​ films with Low-Temperature Buffer Layers

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $β$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers

Over 6 $μ$ m thick MOCVD-grown Low-Background Carrier Density (10 $^{15}$ cm $^{- 3}$ ) High-Mobility (010) $β$ -Ga $_{2}$ O $_{3}$ Drift Layers

Enhancing the Electron Mobility in Si-doped (010) $β$ -Ga $_{2}$ O $_{3}$ films with Low-Temperature Buffer Layers